| |
 |
|
|
Science Forum Index » Materials Forum » Hole mobility in SiGe
Page 1 of 1
|
| Author |
Message |
| Guest |
 Posted: Sat Mar 01, 2008 4:45 am |
|
|
|
|
Do you know any link, textbook,paper where i can find a simple
equation for implementing hole mobility in SiGe?I'm searching an
aquation that considers percentage of germanium and the effect of
strain when the alloy is grown on silicon substrate.
Thanks in advance |
|
|
| Back to top |
|
| Mark Thorson |
| Posted: Sat Mar 01, 2008 10:18 pm |
|
|
|
Guest
|
lionelgreenstreet@gmail.com wrote:
Quote:
Do you know any link, textbook,paper where i can find a simple
equation for implementing hole mobility in SiGe?I'm searching an
aquation that considers percentage of germanium and the effect of
strain when the alloy is grown on silicon substrate.
Annealed or unannealed? |
|
|
| Back to top |
|
| Guest |
| Posted: Sun Mar 02, 2008 12:48 am |
|
|
|
|
On 2 Mar, 03:18, Mark Thorson <nos...@sonic.net> wrote:
Quote: lionelgreenstr...@gmail.com wrote:
Do you know any link, textbook,paper where i can find a simple
equation for implementing hole mobility in SiGe?I'm searching an
aquation that considers percentage of germanium and the effect of
strain when the alloy is grown on silicon substrate.
Annealed or unannealed?
I know that there is a difference between these two condition, but a
great part of papers i've read (for other materials) doesn't consider
this difference....so, i'm interesting about annealed and unannealed
case if it is possible.
Thank you so much |
|
|
| Back to top |
|
| |
|
Page 1 of 1
All times are GMT - 5 Hours
The time now is Mon May 12, 2008 10:29 am
|
|
