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Science Forum Index » Electronics - Misc Forum » Bipolar vs FET: Def. and when to use one or the other?
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| Rich Grise |
 Posted: Wed Mar 14, 2007 3:55 pm |
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On Sat, 10 Mar 2007 18:15:24 +0000, Lostgallifreyan wrote:
Quote: chuck <nospam@nospam.org> wrote in
BJT's are also vastly more robust
in ESD space.
Conversely, FET's are better at withstanding ionising radiation. Weird.
It's not that weird at all. A cosmic ray will introduce one excess current
carrier. If that happens in a BJT's B-E junction, the resulting effect
would be multiplied by beta (Hfe). In a(an?) FET, the current is
controlled by expanding or contracting the electrical channel, and one
current carrier more or less doesn't affect the controlled current all
that much.
Cheers!
Rich |
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| Prajit |
| Posted: Fri Mar 16, 2007 10:24 pm |
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Compared to BJT....MOSFET has higher bandwidth.... higher thermal
stability and also consumes less power....
On Mar 15, 5:55 am, Rich Grise <r...@example.net> wrote:
Quote: On Sat, 10 Mar 2007 18:15:24 +0000, Lostgallifreyan wrote:
chuck <nos...@nospam.org> wrote in
BJT's are also vastly more robust
in ESD space.
Conversely, FET's are better at withstanding ionising radiation. Weird.
It's not that weird at all. A cosmic ray will introduce one excess current
carrier. If that happens in a BJT's B-E junction, the resulting effect
would be multiplied by beta (Hfe). In a(an?) FET, the current is
controlled by expanding or contracting the electrical channel, and one
current carrier more or less doesn't affect the controlled current all
that much.
Cheers!
Rich |
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