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Science Forum Index » Electronics - Design Forum » AT49F002T-50TC data...
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 Posted: Tue May 06, 2008 5:06 pm |
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Features
* Single-voltage Operation
- 5V Read
- 5V Reprogramming
* Fast Read Access Time - 55 ns
* Internal Program Control and Timer
* Sector Architecture
- One 16K Bytes Boot Block with Programming Lockout
- Two 8K Bytes Parameter Blocks
- Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)
* Fast Erase Cycle Time - 4 Seconds
* Byte-by-Byte Programming - 20 ìs/Byte Typical
* Hardware Data Protection
* DATA Polling for End of Program Detection
* Low Power Dissipation
- 25 mA Active Current
- 100 ìA CMOS Standby Current
* Typical 10,000 Write Cycles
* Green (Pb/Halide-free) Packaging Option
Description
The AT49F002A(N)(T) is a 5-volt only in-system reprogrammable Flash
memory. Its 2 megabits of memory is organized as 262,144 words by 8
bits. Manufactured with Atmel's advanced nonvolatile CMOS technology,
the device offers access times to 55 ns with power dissipation of just
137 mW over the industrial temperature range. When the device is
deselected, the CMOS standby current is less than 100 ìA. For the
AT49F002AN(T) pin 1 for the PLCC package and pin 9 for the TSOP
package are no connect pins. To allow for simple in-system
reprogrammability, the AT49F002A(N)(T) does not
require high input voltages for programming. Five-volt-only commands
determine the read and programming operation of the device. Reading
data out of the device is similar to reading from an EPROM; it has
standard CE, OE, and WE inputs to avoid bus contention. Reprogramming
the AT49F002A(N)(T) is performed by erasing a block of data and then
programming on a byte-by-byte basis. The byte programming time is a
fast 20 ìs. The end of a program cycle can be optionally detected by
the DATA polling feature. Once the end of a byte program cycle has
been detected, a new access for a read or program can begin. The
typical number of program and erase cycles is in
excess of 10,000 cycles. The device is erased by executing the erase
command sequence; the device internally controls the erase operations.
There are two 8K byte parameter block sections, four main memory
blocks, and one boot block.The device has the capability to protect
the data in the boot block; this feature is enabled by a command
sequence. The 16K-byte boot block section includes a reprogramming
lock out feature to provide data integrity. The boot sector is
designed to contain user secure code, and when the feature is enabled,
the boot sector is protected from being reprogrammed.
AT49F002T-50TC data http://www.chinaicmart.com/suppliers/160/AT49F002T-50TC.html |
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